Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies

被引：12

作者：

Chuang, HF ^{[1
]}

Lee, CP

Tsai, CM

Liu, DC

Tsang, JS

Fan, JC

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.366692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100 degrees C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed. (C) 1998 American Institute of Physics.

引用

页码：366 / 371

页数：6

共 19 条

[1] Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature [J].

Brown, AS ;

Bhattacharya, P ;

Singh, J ;

Zaman, P ;

Sen, S ;

Turco, F .

APPLIED PHYSICS LETTERS, 1996, 68 (02) :220-222

[2] High-performance InP-Based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried-gate technologies [J].

Chen, KJ ;

Enoki, T ;

Maezawa, K ;

Arai, K ;

Yamamoto, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) :252-257

[3] SCHOTTKY-BARRIER HEIGHT OF INXAL1-XAS EPITAXIAL AND STRAINED LAYERS [J].

CHU, P ;

LIN, CL ;

WIEDER, HH .

APPLIED PHYSICS LETTERS, 1988, 53 (24) :2423-2425

[4] Thermal reactions of Pd/AlxGa1-xAs contacts [J].

Chuang, HF ;

Lee, CP ;

Tsang, JS ;

Fan, JC .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (05) :2891-2895

[5] AN ELECTRICAL METHOD TO CHARACTERIZE THERMAL-REACTIONS OF PD/GAAS AND NI/GAAS CONTACTS [J].

CHUANG, HF ;

LEE, CP ;

LIU, DC .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (06) :767-772

[6] SELF-LIMITING ADVANCING GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

FERNANDES, MG ;

HAN, CC ;

XIA, W ;

LAU, SS ;

KWOK, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1768-1772

[7] 1.09-EV SCHOTTKY-BARRIER HEIGHT OF NEARLY IDEAL PT/AU CONTACTS DIRECTLY DEPOSITED ON N-AL0.48IN0.52AS AND P+N-AL0.48IN0.52AS LAYERS [J].

FRICKE, A ;

STAREEV, G ;

KUMMETZ, T ;

SOWADA, D ;

MAHNSS, J ;

KOWALSKY, W ;

EBELING, KJ .

APPLIED PHYSICS LETTERS, 1994, 65 (06) :755-757

[8] TRANSPARENT AND OPAQUE SCHOTTKY CONTACTS ON UNDOPED IN0.52AL0.48AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

GAO, W ;

BERGER, PR ;

HUNSPERGER, RG ;

ZYDZIK, G ;

RHODES, WW ;

OBRYAN, HM ;

SIVCO, D ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1995, 66 (25) :3471-3473

[9] MEASUREMENTS OF AL-ALINAS SCHOTTKY BARRIERS PREPARED INSITU BY MOLECULAR-BEAM EPITAXY [J].

GUEISSAZ, F ;

GAILHANOU, M ;

HOUDRE, R ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1992, 60 (09) :1099-1101

[10]

HARADA N, 1991, UNPUB 1991 IEEE 3 IN, P377

← 1 2 →