High-Density 3-D Metal-Fuse PROM featuring 1.37μm2 1T1R Bit Cell in 32nm High-k Metal-Gate CMOS Technology

被引：0

作者：

Kulkarni, Sarvesh H. ^{[1
]}

Chen, Zhanping ^{[1
]}

He, Jun ^{[1
]}

Jiang, Lei ^{[1
]}

Pedersen, Brian ^{[1
]}

Zhang, Kevin ^{[1
]}

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

来源：

2009 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2009年

关键词：

High-density PROM and metal fuse; LOGIC TECHNOLOGY; TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 4Kbit high-density PROM array design featuring a high-volume manufacturable metal-fuse technology in 32nm high-k metal-gate CMOS is introduced. In contrast to a traditional salicided polysilicon based 2-D fuse cell, the metal-fuse technology enables a 3-D cell topology with program device and fuse element stacked on each other, achieving a 1.37 mu m(2) cell footprint. The 128-row by 32-column array with an asymmetric tunable static sense scheme can operate down to 0.5V and provides multi-bit programming capability. A 100% programming success rate at 2V-1 mu s condition is achieved along with security protection.

引用

页码：28 / 29

页数：2

共 6 条

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