Thermal damage in SiC Schottky diodes induced by SE heavy ions

被引：25

作者：

Abbate, C. ^{[1
,2
]}

Busatto, G. ^{[1
,2
]}

Cova, P. ^{[3
,4
]}

Delmonte, N. ^{[3
,4
]}

Giuliani, F. ^{[3
,4
]}

Iannuzzo, F. ^{[1
,2
]}

Sanseverino, A. ^{[1
,2
]}

Velardi, F. ^{[1
,2
]}

机构：

[1] DIEI Univ Cassino & Lazio Meridionale, I-03043 Cassino, Italy

[2] INFN Sez Roma, I-00185 Rome, Italy

[3] Univ Parma, Dipartimento Ingn Informaz, I-43124 Parma, Italy

[4] INFN Sez Pavia, I-27100 Pavia, Italy

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期

关键词：

Schottky diodes; Single Event Burnout; Heavy ion irradiation; Electro-thermal simulations; Radiation effects; SINGLE-EVENT BURNOUT; BARRIER DIODES; POWER DIODES;

D O I：

10.1016/j.microrel.2014.07.081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The failure of SiC Schottky diodes due to the impact of high energy heavy ions is investigated by means of electro-thermal and thermal finite element simulations. In particular, 3D ATLAS simulation of a small portion of the diode structure is used for computing the dissipated power density, which is subsequently used as input for the thermal COMSOL simulation of the complete system including chip and packaging. Results show that, as a consequence of the ion penetrating through the device, the temperature at the Schottky barrier becomes bigger than the SiC melting point for a time large enough to cause permanent damages to the SiC lattice. Simulation results are in good agreement with experiments presented in the literature. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：2200 / 2206

页数：7

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