Holographic voltage profiling on 75 nm gate architecture CMOS devices

被引：5

作者：

Thesen, AE

Frost, BG

Joy, DC

机构：

[1] Univ Tennessee, Dept Phys, Knoxville, TN 37996 USA

[2] Univ Tennessee, EM Facil, Knoxville, TN 37996 USA

来源：

ULTRAMICROSCOPY | 2003年 / 94卷 / 3-4期

关键词：

electron holography; dopant profiling; CMOS devices;

D O I：

10.1016/S0304-3991(02)00337-6

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Voltage profiles of the source-drain region of a CMOS transistor with 75 mu gate architecture taken from an off-the-shelf Intel Pill processor are presented. The sample preparation using a dual beam system is discussed as well as details of the electron optical setup of the microscope. Special attention is given to the analysis of the reconstructed holograms. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：277 / 281

页数：5

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