Carbon nitride thin films formation by N2+ ion implantation

被引：27

作者：

Palacio, C ^{[1
]}

Gomez-Aleixandre, C

Diaz, D

Garcia, MM

机构：

[1] Univ Autonoma Madrid, Fac Ciencias C12, E-28049 Madrid, Spain

[2] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

来源：

VACUUM | 1997年 / 48卷 / 7-9期

关键词：

D O I：

10.1016/S0042-207X(97)00036-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low energy (1-5keV) N-2(+) ion irradiation of graphite and diamond surfaces has been investigated by angle resolved X-ray photoelectron spectroscopy (ARXPS). Analysis of the N 1s band indicates the existence of three bands that could be assigned to C-N sp(3), C-N sp(2) types of bonding and molecular nitrogen, respectively. Such an explanation is consistent with the analysis of C 1s band. The depth profiles of implanted nitrogen, recovered by inversion of the angle-dependent XPS data, revealed that ion-dose, ion-energy and angle between the ion beam and the surface normal are relevant parameters to control the composition and the thickness of the produced films. (C) 1997 Elsevier Science Ltd.

引用

页码：709 / 713

页数：5

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