Fabrication of coplanar microstructures composed of multiple organosilane self-assembled monolayers

被引:0
|
作者
Sugimura, H [1 ]
Hozumi, A
Takai, O
机构
[1] Nagoya Univ, Grad Sch Engn, Dept Mat Proc Engn, Nagoya, Aichi 4648603, Japan
[2] Natl Ind Res Inst Nagoya, Nagoya, Aichi 4628510, Japan
关键词
photolithography; organosilane self-assembled monolayer; chemical vapor deposition; scanning probe microscope; excimer lamp;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micropatterning of organosilane self-assembled monolayers (SAMs) was demonstrated on the basis of photolithography using an excimer lamp radiating vacuum ultra-violet (VUV) light of 172 nm in wavelength. This lithography is generally applicable to micropatterning of organic thin films including alkyl and fluoroalkyl SAMs, since its patterning mechanism involves cleavage of C-C bonds in organic molecules and subsequent decomposition of the molecules. In this study, SAMs were prepared on Si substrates covered with native oxide by chemical vapor deposition in which an alkylsilane, that is, octadecyltrimethoxysilane [CH3(CH2)(17)Si(OCH3)(3), ODS] or a fluoroalkylsilane, that is, 1H, 1H, 2H, 2H-perfluorodecyltrimethoxy- silane [CF3(CF2)(7)CH2CH2Si(OCH3)(3), FAS] were used as precursors. Each of these SAMs was photoirradiated through a photomask placed on its surface. As confirmed by atomic force microscopy and x-ray photoelectron spectroscopy, the SAMs were decomposed and removed in the photoirradiated area while the masked areas remained undecomposed. A micropattern of 2 mu m in width was successfully fabricated. Furthermore. microstructures composed of two different SAMs, that is, ODS and FAS, were fabricated as follows. For example, an ODS-SAM was first micropatterned by the VUV-lithography. Since, the VUV-exposed region on the ODS-SAM showed an affinity to the chemisorption of oganosilane molecules, the second SAM, i.c., FAS, confined to the photolithographically defined pattern was successfully fabricated. Due to the electron negativity of F atoms, the FAS covered region showed a more negative surface potential than that of the ODS surface: its potential difference was ca. 120 mV as observed by Kelvin probe force microscopy.
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页码:1099 / 1103
页数:5
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