Bias dependences of in-plane and out-of-plane spin-transfer torques in symmetric MgO-based magnetic tunnel junctions

被引:34
作者
Jung, M. H. [1 ]
Park, S. [2 ]
You, C. -Y. [3 ]
Yuasa, S. [4 ]
机构
[1] Sogang Univ, Dept Phys, Seoul 121742, South Korea
[2] Korea Basic Sci Inst, Taejon 305333, South Korea
[3] Inha Univ, Dept Phys, Inchon 402751, South Korea
[4] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 13期
关键词
DRIVEN; TEMPERATURE; DEVICES; EMISSION;
D O I
10.1103/PhysRevB.81.134419
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the bias dependences of in-plane and out-of-plane spin-transfer torque by employing magnetic noise measurement in symmetric MgO-based magnetic tunneling junction devices. The measured power spectra densities of magnetic noise are successfully analyzed by the fluctuation-dissipation theorem with an imaginary part of transverse susceptibility including spin-transfer torque contributions. We find that the in-plane component has a linear dependence of the bias voltage, while the out-of-plane component has a quadratic dependence. These results are well consistent with the noise amplitude analysis, neglecting the Joule heating effect with small bias voltage.
引用
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页数:5
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