Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N

被引：48
作者：
Rigutti, L. [1 ,2 ]
Mancini, L. [1 ,2 ]
Hernandez-Maldonado, D. [1 ,2 ,4 ]
Lefebvre, W. [1 ,2 ]
Giraud, E. [3 ]
Butte, R. [3 ]
Carlin, J. F. [3 ]
Grandjean, N. [3 ]
Blavette, D. [1 ,2 ]
Vurpillot, F. [1 ,2 ]
机构：
[1] Univ Rouen, CNRS, Grp Phys Mat, UMR 6634, F-76800 St Etienne Du Rouvray, France
[2] Normandie Univ, INSA Rouen, F-76800 St Etienne Du Rouvray, France
[3] Ecole Polytech Fed Lausanne, Inst Phys IPhys, CH-1015 Lausanne, Switzerland
[4] SuperSTEM STFC Daresbury Labs, Warrington WA4 4AD, Cheshire, England
来源：
JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 10期
关键词：
TRANSMISSION ELECTRON-MICROSCOPY; BAND-GAP; EXCITON LOCALIZATION; QUANTUM-WELLS; PARAMETERS; ALGAN; STOICHIOMETRY; FLUCTUATIONS; LUMINESCENCE; TEMPERATURE;
D O I：
10.1063/1.4943612
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The ternary semiconductor alloy Al0.25Ga0.75N has been analyzed by means of correlated photoluminescence spectroscopy and atom probe tomography (APT). We find that the composition measured by APT is strongly dependent on the surface electric field, leading to erroneous measurements of the alloy composition at high field, due to the different evaporation behaviors of Al and Ga atoms. After showing how a biased measurement of the alloy content leads to inaccurate predictions on the optical properties of the material, we develop a correction procedure which yields consistent transition and localization energies for the alloy photoluminescence. (C) 2016 AIP Publishing LLC.
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页数：14
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