Investigation of compositional inhomogeneities in complex polycrystalline Cu(In,Ga)Se2 layers for solar cells

被引：25

作者：

Fontane, X. ^{[1
]}

Izquierdo-Roca, V. ^{[1
]}

Calvo-Barrio, L. ^{[1
,5
]}

Perez-Rodriguez, A. ^{[1
,3
]}

Morante, J. R. ^{[1
,3
]}

Guettler, Dominik ^{[4
]}

Eicke, A. ^{[2
]}

Tiwari, A. N. ^{[4
]}

机构：

[1] Univ Barcelona, Dept Elect, M 2E XaRMAE IN2UB, E-08028 Barcelona, Spain

[2] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70565 Stuttgart, Germany

[3] Catalonia Inst Energy Res, IREC, Barcelona 08019, Spain

[4] EMPA, Swiss Fed Labs Mat Testing & Res, Lab Thin Films & Photovolta, CH-8600 Dubendorf, Switzerland

[5] Univ Barcelona, SCT, Lab Anal Superficies, E-08028 Barcelona, Spain

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 26期

关键词：

copper compounds; gallium compounds; indium compounds; Raman spectra; semiconductor thin films; solar cells; ternary semiconductors; THIN-FILMS; SIMULATION;

D O I：

10.1063/1.3280049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In-depth resolved composition inhomogeneities of polycrystalline Cu(In,Ga)Se-2 (CIGS) complex layers for high efficiency solar cells were investigated with Raman scattering measurements. In-depth resolved analysis of the frequency of the main CIGS Raman mode in the spectra measured after sputtering of the layers at different depths lead to identification of different compositions across the layer thickness. These data are in good agreement at both qualitative and quantitative levels with the in-depth resolved composition analysis of the samples by sputtered neutral mass spectroscopy. In addition, Raman measurements also allow detection of additional phases as ordered vacancy compounds.

引用

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