Energy-efficient non-volatile ferroelectric based electrostatic doping multilevel optical readout memory

被引：5
作者：
Yao, Danyang [1 ]
Li, Lei [1 ]
Zhang, Yong [1 ]
Peng, Yue [1 ]
Zhou, Jiuren [1 ,2 ]
Han, Genquan [1 ,3 ]
Liu, Yan [1 ,3 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China
[2] Xidian Univ, Hangzhou Inst Technol, Emerging Device & Chip Lab, Hangzhou 311200, Peoples R China
[3] Zhejiang Lab, Res Ctr Intelligent Chips, Hangzhou 311121, Peoples R China
来源：
OPTICS EXPRESS | 2022年 / 30卷 / 08期
基金：
中国国家自然科学基金;
关键词：
WAVE-GUIDES; TRANSISTORS; FILMS;
D O I：
10.1364/OE.456048
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Non-volatile multilevel optical memory is an urgent needed artificial component in neuromorphic computing. In this paper, based on ferroelectric based electrostatic doping (Fe-ED) and optical readout due to plasma dispersion effect, we propose an electrically programmable, multi-level non-volatile photonics memory cell, which can be fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. Hf0.5Zr0.5O2 (HZO) film is chosen as the ferroelectric ED layer and combines with polysilicon layers for an enhanced amplitude modulation between the carrier accumulation and the confined optical field. Insertion loss below 0.4 dB in erasing state and the maximum recording depth of 9.8 dB are obtained, meanwhile maintaining an extremely low dynamic energy consumption as 1.0-8.4 pJ/level. Those features make this memory a promising candidate for artificial optical synapse in neuromorphic photonics and parallel computing. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码：13572 / 13582
页数：11
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