Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

被引：2
|
作者：
Ma, Jingyi [1 ]
Tong, Ling [1 ]
Guo, Xiaojiao [1 ]
Chen, Xinyu [1 ]
Zhang, Minxing [1 ]
Wu, Chenjian [2 ]
Bao, Wenzhong [1 ]
机构：
[1] Fudan Univ, State Key Lab ASIC & Syst, Sch Microelect, Shanghai 200433, Peoples R China
[2] Soochow Univ, Sch Elect Informat, Suzhou 215006, Peoples R China
来源：
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
基金：
中国国家自然科学基金;
关键词：
MoS2; different metal gates and inverter; CIRCUITS;
D O I：
10.1109/EDTM50988.2021.9420915
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Various methods have been investigated to manipulate the electrical properties of MoS2 transistors to achieve applicable logic levels, which are essential for integrated multistage logic circuits. A doping-free strategy by using metal gates with different work functions is demonstrated to modulate threshold voltage (V-TH), which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages from 0.2 V to 0.6 V and the obtained voltage gain is over 35.
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页数：3
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