Study of structural and optical properties of nanocrystalline silicon embedded in SiO2

被引：48
|
作者：
Yun, F
Hinds, BJ
Hatatani, S
Oda, S
Zhao, QX
Willander, M
机构：
[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan
[2] Gothenburg Univ, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden
[3] Chalmers Univ Technol, S-41296 Gothenburg, Sweden
来源：
THIN SOLID FILMS | 2000年 / 375卷 / 1-2期
关键词：
nanostructures; plasma processing and deposition; segregation; silicon;
D O I：
10.1016/S0040-6090(00)01259-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon-rich suboxide (SiOx, x < 2) films with oxygen content (x) ranging from 1.0 to 1.9 were deposited by plasma enhanced CVD on a silicon substrate. Successive annealing at various temperatures was carried out to form Si nanoparticles embedded in a SiO2 matrix. FTIR was used for monitoring the process. From HRTEM observation, Si quantum dot size is tunable for different initial composition and annealing temperature. As-deposited suboxide films exhibited strong photoluminescence which was quenched after high temperature anneals. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：137 / 141
页数：5
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