Theoretical investigation of the reflectivity of fullerene-(C60, C70)/AlN multilayers in UV region

被引:12
作者
Xu, BS [1 ]
Han, P
Liang, J
Liu, XG
Bao, HQ
Li, TB
Chen, MW
Ichinose, H
机构
[1] Taiyuan Univ Technol, Coll Mat Sci & Engn, Taiyuan 030024, Peoples R China
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Hokkaido Univ, Ctr Adv Res Energy Convers Mat, Sapporo, Hokkaido 0608628, Japan
基金
中国国家自然科学基金; 日本学术振兴会;
关键词
AlN; fullerene; multilayer films; photonic band gap; TMM method;
D O I
10.1016/j.ssc.2004.11.041
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Theoretical calculations via a transfer matrix method (TMM) were performed to investigate the possibility of fullerene/AlN multilayer films acting as one-dimensional (1D) photonic band gap (PBG) crystals. The response within and out of the periodic plane Of (C-60, C-70)/AlN multilayers was studied. (C-60, C-70)/AlN multilayer films presented incomplete PBG behavior in UV region. C-60/AlN multilayers with two pairs of 49 nm-C-60 and 21 nm-AlN layers exhibited a high reflectivity of 90.4% at a wavelength of about 200 nm. As a consequence, this photonic crystal may be important for achieving materials with an incomplete band gap in the UV region. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:353 / 356
页数:4
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