GaAs p-i-n Photodiode Array on GaP Using Wafer Fusion

被引：0

作者：

Mathur, Vaibhav ^{[1
]}

Vangala, Shivashankar ^{[2
]}

机构：

[1] Axsun Technol Inc, Billerica, MA 01821 USA

[2] Solid State Sci Corp, Nashua, NH 03060 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2015年 / 27卷 / 05期

关键词：

Wafer fusion; photodiodes; adaptive optics; MEMS;

D O I：

10.1109/LPT.2014.2377234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we describe a novel wafer fusion process for transferring GaAs p-i-n junctions onto a GaP handle substrate. A process for patterning large arrays (30 x 30) of these photodiodes using a wet etch scheme is presented. We also present photoresponse characteristics of these diodes both with and without the high temperature wafer fusion process. Application of this device in an optically addressed adaptive optics system is also discussed.

引用

页码：466 / 469

页数：4

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