Preparation of the SrTiO3 thin films on various substrates using pulsed laser deposition

被引:0
作者
Kim, IW [1 ]
Bae, SB
Lee, JS
Kamei, M
Gomi, M
机构
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Kyungsung Univ, Dept Phys, Pusan 608736, South Korea
[3] JAIST, Ctr New Mat, Ishikawa 92312, Japan
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
SrTiO3 (STO) thin films have been prepared on Sapphire(0001), GGG(111), MgO(001), Si(lll), Pt(lll) substrates. The thickness of STO/GGG and STO/Pt are 1500 Angstrom, STO/MgO and STO/Si are 1000 Angstrom, and STO/Sapphire is 400 Angstrom. The chemical composition of film, Sr/Ti was estimated by X-ray Photoelectron Spectroscopy (XPS). STO films on MgO and GGG substrates have the composition closer to the stoichiometric, but STO films on Sapphire, Si, and Pt substrates have the excess Ti composition. The X-ray diffraction (XRD) measurements indicated the STO film was grown epitaxially with (100) orientation on MgO substrates and (111) orientation on Si substrate, but the STO films on Sapphire, GGG, and Pt substrates was grown polycrystalline, which is some kinds of mixed orientation. Scanning electron micrographs reveal that all of the films consist of almost perfect spherical particulates on a smooth background film. The better film morphology (0.1 similar to 0.3 mu m) is obtained using an off-axis arrangement between target and substrate. The reflectance spectra of the STO/MgO film in the TM and TE polarization showed a peak structure near a TO phonon mode (544 cm(-1)) and LO phonon mode (825 cm(-1)).
引用
收藏
页码:S1509 / S1512
页数:4
相关论文
共 14 条
  • [1] Infrared reflectance studies on a Fe3O4 film deposited on a MgO substrate: Observation of the substrate longitudinal optic phonon resonance peak in the film geometry
    Ahn, JS
    Choi, HS
    Noh, TW
    [J]. PHYSICAL REVIEW B, 1996, 53 (15) : 10310 - 10316
  • [2] INFRARED ABSORPTION AT LONGITUDINAL OPTIC FREQUENCY IN CUBIC CRYSTAL FILMS
    BERREMAN, DW
    [J]. PHYSICAL REVIEW, 1963, 130 (06): : 2193 - &
  • [3] CHOI HS, 1995, J KOREAN PHYS SOC, V28, P636
  • [4] Chrisey D. B., 1994, PULSED LASER DEPOSIT
  • [5] EFFECT OF NONSTOICHIOMETRY ON DIELECTRIC-PROPERTIES OF STRONTIUM-TITANATE THIN-FILMS GROWN BY ARF EXCIMER-LASER ABLATION
    HIRANO, T
    TAGA, M
    KOBAYASHI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12A): : L1760 - L1763
  • [6] ORIENTATION AND CRYSTAL-STRUCTURE OF SRTIO3 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION
    HIRATANI, M
    IMAGAWA, K
    TAKAGI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (01): : 254 - 260
  • [7] GROWTH OF SRTIO3 THIN-FILMS BY PULSED-LASER DEPOSITION
    HIRATANI, M
    TARUTANI, Y
    FUKAZAWA, T
    OKAMOTO, M
    TAKAGI, K
    [J]. THIN SOLID FILMS, 1993, 227 (01) : 100 - 104
  • [8] Effects of buffer layers in epitaxial growth of SrTiO3 thin film on Si(100)
    Nakagawara, O
    Kobayashi, M
    Yoshino, Y
    Katayama, Y
    Tabata, H
    Kawai, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) : 7226 - 7230
  • [9] NOH TW, 1994, J KOREAN PHYS SOC, V27, pS34
  • [10] BARRIER LAYERS FOR REALIZATION OF HIGH CAPACITANCE DENSITY IN SRTIO3 THIN-FILM CAPACITOR ON SILICON
    SAKUMA, T
    YAMAMICHI, S
    MATSUBARA, S
    YAMAGUCHI, H
    MIYASAKA, Y
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (23) : 2431 - 2433