40Gbit/s waveguide avalanche photodiode with p-type absorption layer and thin InAlAs multiplication layer

被引：24

作者：

Shimizu, S.

Shiba, K.

Nakata, T.

Kasahara, K.

Makita, K.

机构：

[1] Ritsumeikan Univ, Dept Photon, Fac Sci & Engn, Kusatsu, Shiga 5258577, Japan

[2] NEC Corp Ltd, Syst Devices Res Labs, Otsu, Shiga 5200833, Japan

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 08期

关键词：

HIGH-SPEED;

D O I：

10.1049/el:20070344

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Waveguide avalanche photodiodes exhibiting both wide bandwidth and high gain bandwidth product have been developed. An absorption layer includes a p-type quasi-field-formed layer and a multiplication layer consists of InAlAs with a low ionisation rate ratio. Optimisation of the design yielded superior performance such as a wide bandwidth of 36.5 GHz, a gain band width of 170 GHz and a high quantum efficiency of 0.75 A/W.

引用

页码：476 / 477

页数：2

共 5 条

[1]

DEMIGUEL S, 2004, P OPT FIB COMM C OFC

[2] High-speed avalanche photodiode with a neutral absorption layer for 1.55 μm wavelength [J].

Hirota, Y ;

Ando, S ;

Ishibashi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (3A) :L375-L377

[3] High-speed response of uni-traveling-carrier photodiodes [J].

Ishibashi, T ;

Kodama, S ;

Shimizu, N ;

Furuta, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (10) :6263-6268

[4] InAlAs avalanche photodiodes with very thin multiplication layer of 0.1μm for highspeed and low-voltage-operation optical receiver [J].

Nakata, T ;

Watanabe, I ;

Makita, K ;

Torikai, T .

ELECTRONICS LETTERS, 2000, 36 (21) :1807-1809

[5]

NAKATA T, 2002, P 28 EUR C OPT COMM, V4

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