A K-Band High-OP1dB Common-Drain Power Amplifier With Neutralization Technique in 90-nm CMOS Technology

被引：7
|
作者：
Chang, Yang [1 ,2 ]
Wang, Yunshan [1 ]
Wang, Huei [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Commun Engn, Dept Elect Engn, Taipei 106, Taiwan
[2] Realtek Semicond Corp, Hsinchu 300, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2019年 / 29卷 / 12期
关键词：
CMOS; common-drain (CD); K-band; neutralization technique; power amplifier (PA);
D O I：
10.1109/LMWC.2019.2947247
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a fully integrated K-band high output 1-dB compression point ( OP1dB) power amplifier (PA) fabricated in the 90-nm CMOS process. Common- drain (CD) structure is adopted to achieve high OP1dB. Since the CD structure suffers from the poor stability and power gain, the proposed neutralization technique for the CD amplifier is used to improve both of them simultaneously. The measured results of the proposed PA demonstrate the saturated output power ( Psat) of 22.9 dBm with 24.2% peak power-added efficiency (PAE), OP1dB of 22.5 dBm with 22.5% PAE. To the best of authors' knowledge, the proposed CD PA is the first CMOS CD PA above 10 GHz.
引用
收藏
页码：795 / 797
页数：3
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