Encapsulated Ge detectors: Development and first tests

被引:208
作者
Eberth, J
Thomas, HG
vonBrentano, P
Lieder, RM
Jager, HM
Kammerling, H
Berst, M
Gutknecht, D
Henck, R
机构
[1] UNIV COLOGNE, INST KERNPHYS, D-50937 COLOGNE, GERMANY
[2] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST KERNPHYS, D-52425 JULICH, GERMANY
[3] FORSCHUNGSZENTRUM JULICH GMBH, ZENT ABT TECHNOL, JULICH, GERMANY
[4] EURISYS MEASURES, STRASBOURG, FRANCE
关键词
D O I
10.1016/0168-9002(95)00794-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This paper discusses the development and the realisation of an encapsulated Ge detector. The properties of a first prototype detector are: relative efficiency epsilon(rel) = 21.4%; energy resolution: Delta E(gamma(1.33 Mev)) = 2.10keV and Delta E(gamma(122 KeV)) = 1.10keV. The encapsulation technology offers advantages: several encapsulated Ge detectors can be mounted closely packed in a cryostat, all electronic parts of the first preamplifier stage are accessible and induced radiation damage of the Ge crystal can be annealed in a standard furnace.
引用
收藏
页码:135 / 140
页数:6
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