Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization

被引：155

作者：

Cao, Helin ^{[1
,2
]}

Yu, Qingkai ^{[3
]}

Jauregui, L. A. ^{[2
,4
]}

Tian, J. ^{[1
,2
]}

Wu, W. ^{[3
]}

Liu, Z. ^{[3
]}

Jalilian, R. ^{[1
,2
]}

Benjamin, D. K. ^{[5
]}

Jiang, Z. ^{[5
]}

Bao, J. ^{[3
]}

Pei, S. S. ^{[3
]}

Chen, Yong P. ^{[1
,2
,4
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Univ Houston, Ctr Adv Mat, Houston, TX 77204 USA

[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[5] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期

基金：

美国国家科学基金会;

关键词：

carrier mobility; chemical vapour deposition; CVD coatings; electronic structure; graphene; monolayers; quantum Hall effect; Raman spectra; weak localisation; FEW-LAYER GRAPHENE; LARGE-AREA; FILMS;

D O I：

10.1063/1.3371684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 in.) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on microdevices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio similar to 5 and carrier mobilities up to similar to 3000 cm(2)/V s) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.

引用

页数：3

共 33 条

[1]

BEENAKKER WJ, 1991, QUANTUM TRANSPORT SE, V44

[2] Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers [J].

Berciaud, Stephane ;

Ryu, Sunmin ;

Brus, Louis E. ;

Heinz, Tony F. .

NANO LETTERS, 2009, 9 (01) :346-352

[3] Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties [J].

Cao, Helin ;

Yu, Qingkai ;

Colby, Robert ;

Pandey, Deepak ;

Park, C. S. ;

Lian, Jie ;

Zemlyanov, Dmitry ;

Childres, Isaac ;

Drachev, Vladimir ;

Stach, Eric A. ;

Hussain, Muhammad ;

Li, Hao ;

Pei, Steven S. ;

Chen, Yong P. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (04)

[4] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[5] Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition [J].

De Arco, Lewis Gomez ;

Zhang, Yi ;

Kumar, Akshay ;

Zhou, Chongwu .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2009, 8 (02) :135-138

[6] Epitaxial graphene [J].

de Heer, Walt A. ;

Berger, Claire ;

Wu, Xiaosong ;

First, Phillip N. ;

Conrad, Edward H. ;

Li, Xuebin ;

Li, Tianbo ;

Sprinkle, Michael ;

Hass, Joanna ;

Sadowski, Marcin L. ;

Potemski, Marek ;

Martinez, Gerard .

SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :92-100

[7]

Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]

[8] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[9] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[10]

JOBST J, ARXIV09081900V1, P91112

← 1 2 3 4 →