Fe/Si(111) interface formation studied by photoelectron diffraction

被引：16
作者：
Avila, J
Mascaraque, A
Teodorescu, C
Michel, EG
Asensio, MC
机构：
[1] INST CIENCIA MAT NICOLAS CABRERA,MADRID 28049,SPAIN
[2] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA,E-28049 MADRID,SPAIN
[3] CSIC,INST CIENCIA MAT,E-28049 MADRID,SPAIN
[4] LAB UTILISAT RAYONNEMENT ELECTROMAGNET,F-91405 ORSAY,FRANCE
来源：
SURFACE SCIENCE | 1997年 / 377卷 / 1-3期
关键词：
iron; metal-semiconductor interfaces; photoelectron diffraction; photoelectron emission; silicides; silicon;
D O I：
10.1016/S0039-6028(96)01496-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The early stages of the interface formation of Fe deposited on Si(111)-(7 x 7) have been investigated as a function of Fe coverage and annealing temperature using the photoelectron diffraction technique. The intensity variation of the Si 2p and Fe 3p core levels was monitored in a full emission cone of a 60 degrees polar angle and a 360 degrees azimuthal angle. Annealing of 1 ML Fe to 150 degrees C produces a well-ordered interface. From a detailed analysis of the intensity modulations of both core levels as a function of emission angles, we deduce that Fe atoms occupy substitutional positions underneath a top silicon layer.
引用
收藏
页码：856 / 860
页数：5
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