Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

被引：161

作者：

Guo, Yuzheng ^{[1
]}

Robertson, John ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 23期

关键词：

EPITAXIAL-GROWTH; WAALS HETEROSTRUCTURES; OPTICAL-PROPERTIES; GAP; OFFSETS; HETEROJUNCTIONS; SEMICONDUCTORS; TRANSISTORS; ENERGY;

D O I：

10.1063/1.4953169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties. Published by AIP Publishing.

引用

页数：5

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