Oxygen ion drifted bipolar resistive switching behaviors in TiO2-Al electrode interfaces

被引：25

作者：

Do, Young Ho ^{[1
]}

Kwak, June Sik ^{[1
]}

Bae, Yoon Cheol ^{[2
]}

Jung, Kyooho ^{[3
]}

Im, Hyunsik ^{[3
]}

Hong, Jin Pyo ^{[1
,2
]}

机构：

[1] Hanyang Univ, Dept Phys, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea

[2] Hanyang Univ, Div Nanosemicond Engn, Seoul 133791, South Korea

[3] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 15期

关键词：

Nonvolatile memory; Redox reaction; Titanium dioxide; Electrode interface; Auger electron spectroscopy; Current-Voltage Measurements; MEMORY APPLICATIONS; FILMS;

D O I：

10.1016/j.tsf.2010.01.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The rutile TiO2 thin film involving two different top electrodes (Pt and Al) clearly shows the unipolar and bipolar resistive switching transitions which are dependent on the degree of redox properties at TiO2 layer-electrode interfaces. Detailed current level analysis coupled with Auger electron spectroscopy measurements of the Pt/TiO2/Pt and Al/TiO2/Pt structures in the on/off switching states revealed the implication of oxygen ion migration induced chemical reaction at the Al-TiO2 interfaces. Therefore, it is expected that the bipolar transition nature of resistive switching with an Al electrode is the resulting formation of a thin AlOx layer due to redox reaction at Al-TiO2 layer interfaces. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4408 / 4411

页数：4

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