Dark field transmission electron microscope images of III-V quantum dot structures

被引:39
作者
Beanland, R [1 ]
机构
[1] Bookham Technol, Analyt Serv, Towcester NN12 8EQ, Northants, England
关键词
quantum dot; TEM; dark field 002 images; dark field 113 images;
D O I
10.1016/j.ultramic.2004.09.003
中图分类号
TH742 [显微镜];
学科分类号
摘要
Multi-layer quantum dot structures are becoming increasingly common in order to improve the efficiency of quantum dot lasers. Each layer of dots may be influenced by the preceding dot layer, and the dot density can vary from layer to layer. Characterization of such structures relies on the reliable determination of the shape, size and density of dots in each layer. Dark field transmission electron microscopy (TEM) images using the 002 diffraction condition are frequently used, viewing the layers edge-on in a cross-section sample. A simple model is used to describe the contrast as a function of dot size and shape, specimen thickness, and the composition of the dot and surrounding materials. Good agreement with experimental results is obtained. It is found that the dot size is not accurately related to the bright region seen in such images. While 002 images can be used to determine the size and shape of dots, a density per unit area cannot be calculated in the cross section geometry without either measuring-or assuming-the specimen thickness. In multilayer structures, plan-view TEM images show the layers as overlapping, losing the information from individual layers. By tilting a cross-section specimen to allow imaging with the dark field 113 diffraction condition, the density in individual layers can be measured. Additional information, such as wetting layer thickness variations and alignment of dots due to surface roughness or substrate offcut, can also be obtained. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:115 / 125
页数:11
相关论文
共 25 条
[1]   III-V TERNARY SEMICONDUCTOR HETEROSTRUCTURES - THE CHOICE OF AN APPROPRIATE COMPOSITIONAL ANALYSIS TECHNIQUE [J].
BITHELL, EG ;
STOBBS, WM .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2149-2155
[2]   COMPOSITION DETERMINATION IN THE GAAS/(AL, GA)AS SYSTEM USING CONTRAST IN DARK-FIELD TRANSMISSION ELECTRON-MICROSCOPE IMAGES [J].
BITHELL, EG ;
STOBBS, WM .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 60 (01) :39-62
[3]   Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm [J].
Bloch, J ;
Shah, J ;
Pfeiffer, LN ;
West, KW ;
Chu, SNG .
APPLIED PHYSICS LETTERS, 2000, 77 (16) :2545-2547
[4]  
CAGNON J, 2002, I PHYS C SERIES, V169, P37
[5]  
CAGNON J, 2004, I PHYS C SERIES, V180, P203
[6]   TRANSMISSION ELECTRON-MICROSCOPY OF HETEROEPITAXIAL LAYER STRUCTURES [J].
CERVA, H .
APPLIED SURFACE SCIENCE, 1991, 50 (1-4) :19-27
[7]   Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy [J].
Chauveau, JM ;
Androussi, Y ;
Lefebvre, A ;
Di Persio, J ;
Cordier, Y .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) :4219-4225
[8]   RELATIVISTIC HARTREE-FOCK X-RAY AND ELECTRON SCATTERING FACTORS [J].
DOYLE, PA ;
TURNER, PS .
ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :390-&
[9]  
DROUOT V, 2004, I PHYS C SERIES, V180, P107
[10]   DETERMINATION OF FOIL THICKNESS BY SCANNING-TRANSMISSION ELECTRON-MICROSCOPY [J].
KELLY, PM ;
JOSTSONS, A ;
BLAKE, RG ;
NAPIER, JG .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02) :771-780