SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization

被引：0

作者：

Kosugi, Tomohiro ^{[1
]}

Yagi, Kazuki ^{[1
]}

Sadoh, Taizoh ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Nishi Ku, 744 Motooka, Fukuoka 8190395, Japan

来源：

2020 TWENTY-SEVENTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 20): TFT TECHNOLOGIES AND FPD MATERIALS | 2020年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Effects of the Sn concentration and film thickness on solid-phase crystallization of SiSn films on insulator have been investigated. It is found that growth velocities significantly increase with increasing Sn concentration from 5% to 10%. For low Sn concentration (5%), the growth velocities decease with decreasing film thickness. On the other hand, for high Sn concentration (10%), the growth velocities do not depend on the thickness. These phenomena suggest that the growth process for low Sn concentrations are easily affected by the interface.

引用

页数：2