Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition

被引：49
作者：
Jeong, Sang Ha [1 ,2 ]
Thi Kim Oanh Vu [1 ,2 ]
Kim, Eun Kyu [1 ,2 ]
机构：
[1] Hanyang Univ, Dept Phys, Seoul 04763, South Korea
[2] Hanyang Univ, Res Inst Convergence Basic Sci, Seoul 04763, South Korea
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2021年 / 877卷
基金：
新加坡国家研究基金会;
关键词：
Ga2O3; PLD; DUV photodetector; Furnace annealing; BETA-GA2O3; THIN-FILMS; ULTRAVIOLET; INTERFACE;
D O I：
10.1016/j.jallcom.2021.160291
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We studied Si-doped Ga2O3 photodetectors with a metal-semiconductor-metal structure that were fabricated using pulsed laser deposition and a post-annealing process under an oxygen atmosphere in a temperature range from 500 degrees C to 800 degrees C. After post-annealing, the Si-doped Ga2O3 photodetectors with 500 degrees C was showed the highest photoresponsivity (0.34 A/W) and external quantum efficiency (166.23%), while the device with 800 degrees C was exhibited the fastest switching speeds (0.88 s/0.18 s) for the on/off switching. These results are due to changes in the defect densities from the chemical bond formation between Si and O atoms. Our results show that post thermal annealing of Si-doped beta-Ga2O3 layers can modify the photo detector performance depending on applications for high photoresponsivity or fast response time. (C) 2021 Elsevier B.V. All rights reserved.
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页数：6
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