Effect of hydrostatic pressure on series resistance of Au/n-GaAs Schottky diodes

被引：0
|
作者：
Çankaya, G
Uçar, N
机构：
[1] Ataturk Univ, Fac Sci & Arts, Dept Phys, Erzurum, Turkey
[2] Suleyman Demirel Univ, Fac Sci & Arts, Dept Phys, Isparta, Turkey
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2003年 / 41卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Au/n-GaAs Schottky barrier diodes have been fabricated. The series resistance has been measured as a function of hydrostatic pressure using the current-voltage (I-V) technique. It has been found that the series resistance increases with increasing hydrostatic pressure.
引用
收藏
页码：36 / 39
页数：4
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