Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment

被引：0

作者：

Huang, MQ ^{[1
]}

Lai, PT ^{[1
]}

Xu, JP ^{[1
]}

Zeng, SH ^{[1
]}

Li, GQ ^{[1
]}

Cheng, YC ^{[1
]}

机构：

[1] S China Univ Technol, Dept Appl Phys, Guangzhou, Peoples R China

来源：

1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/HKEDM.1997.642339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step an the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behaviour was observed, indicating an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si/SiO2 interface induced by the backsurface bombardment.

引用

页码：90 / 93

页数：4