Quantum dot lasers for silicon photonics

[21] Quantum dot semiconductor lasers with optical feedback [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (02): : 345 - 352

[22] A hybrid silicon evanescent quantum dot laser [J]. APPLIED PHYSICS EXPRESS, 2016, 9 (09)

[23] Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C [J]. OPTICS EXPRESS, 2016, 24 (16): : 18428 - 18435

[24] InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (08) : 875 - 878

[25] Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si [J]. APPLIED PHYSICS LETTERS, 2018, 112 (15)

[26] Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency [J]. ACS PHOTONICS, 2018, 5 (03): : 1094 - 1100

[27] Low threading dislocation density GaAs growth on on-axis GaP/Si (001) [J]. JOURNAL OF APPLIED PHYSICS, 2017, 122 (22)

[28] Kageyama T., 2011 C LAS EL EUR 12, P1, DOI [10.1109/CLEOE.2011.5943701, DOI 10.1109/CLEOE.2011.5943701]

[29] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J]. ELECTRONICS LETTERS, 1994, 30 (17) : 1416 - 1417

[30] Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SB)

[21] Quantum dot semiconductor lasers with optical feedback [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (02): : 345 - 352

[22] A hybrid silicon evanescent quantum dot laser [J]. APPLIED PHYSICS EXPRESS, 2016, 9 (09)

[23] Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C [J]. OPTICS EXPRESS, 2016, 24 (16): : 18428 - 18435

[24] InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (08) : 875 - 878

[25] Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si [J]. APPLIED PHYSICS LETTERS, 2018, 112 (15)

[26] Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency [J]. ACS PHOTONICS, 2018, 5 (03): : 1094 - 1100

[27] Low threading dislocation density GaAs growth on on-axis GaP/Si (001) [J]. JOURNAL OF APPLIED PHYSICS, 2017, 122 (22)

[28] Kageyama T., 2011 C LAS EL EUR 12, P1, DOI [10.1109/CLEOE.2011.5943701, DOI 10.1109/CLEOE.2011.5943701]

[29] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J]. ELECTRONICS LETTERS, 1994, 30 (17) : 1416 - 1417

[30] Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SB)