Quantum dot lasers for silicon photonics

[11] Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/nphoton.2016.21, 10.1038/NPHOTON.2016.21]

[12] 1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (05) : 345 - 348

[13] Highly tunable heterogeneously integrated III-V on silicon sampled-grating distributed Bragg reflector lasers operating in the O-band [J]. OPTICS EXPRESS, 2016, 24 (18): : 20895 - 20903

[14] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[15] A distributed feedback silicon evanescent laser [J]. OPTICS EXPRESS, 2008, 16 (07): : 4413 - 4419

[16] Very-low-threshold current density continuous-wave quantum-dot laser diode [J]. ELECTRONICS LETTERS, 2008, 44 (11) : 679 - U32

[17] Ganga I., 2008, IEEE P802 3BA TASK F

[18] Glas G., 1987, I PHYS C SERIES, V87, P71

[19] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101

[20] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2110 - 2112

[11] Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/nphoton.2016.21, 10.1038/NPHOTON.2016.21]

[12] 1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (05) : 345 - 348

[13] Highly tunable heterogeneously integrated III-V on silicon sampled-grating distributed Bragg reflector lasers operating in the O-band [J]. OPTICS EXPRESS, 2016, 24 (18): : 20895 - 20903

[14] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[15] A distributed feedback silicon evanescent laser [J]. OPTICS EXPRESS, 2008, 16 (07): : 4413 - 4419

[16] Very-low-threshold current density continuous-wave quantum-dot laser diode [J]. ELECTRONICS LETTERS, 2008, 44 (11) : 679 - U32

[17] Ganga I., 2008, IEEE P802 3BA TASK F

[18] Glas G., 1987, I PHYS C SERIES, V87, P71

[19] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101

[20] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2110 - 2112