Luminescence and superradiance in electron-beam-excited AlxGa1-xN

被引：14
作者：
Bokhan, P. A. [1 ]
Gugin, P. P. [1 ]
Zakrevsky, Dm. E. [1 ]
Zhuravlev, K. S. [1 ,2 ]
Malin, T. V. [1 ]
Osinnykh, I. V. [1 ,2 ]
Solomonov, V. I. [3 ]
Spirina, A. V. [3 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
[3] Russian Acad Sci, Ural Div, Inst Electrophys, Ekaterinburg 620016, Russia
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 11期
关键词：
BAND-GAP; LIGHT-EMISSION; LASER-DIODES; ALN; AL(X)GA1-XN; EPITAXY; DEVICES; ALLOYS;
D O I：
10.1063/1.4894774
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Luminescence and superradiance characteristics of 0.5-1.2-mu m thick AlxGa1-xN films grown by molecular-beam epitaxy on sapphire substrates were studied under excitation of the films with low-energy (<20 keV) and high-energy (170 keV) electron beams. In both cases, the luminescence spectra looked quite similarly; they exhibited a band-edge luminescence with x-dependent wavelength ranging from 365 nm to 310 nm and a broadband emission taking over the whole visible spectral region. Superradiance within the broad band was obtained by pumping the samples with powerful an electron beam in the form of an open-discharge-generated filament. (C) 2014 AIP Publishing LLC.
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页数：6
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