Strain Tuning of the Anisotropy in the Optoelectronic Properties of TiS3

被引：19

作者：

Silva-Guillen, J. A. ^{[1
,2
]}

Canadell, E. ^{[3
]}

Guinea, F. ^{[2
,4
]}

Roldan, R. ^{[5
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China

[2] Fdn IMDEA Nanociencia, C Faraday 9,Campus Cantoblanco, Madrid 28049, Spain

[3] CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus Bellaterra, Bellaterra 08193, Spain

[4] Univ Manchester, Dept Phys & Astron, Oxford Rd, Manchester M13 9PL, Lancs, England

[5] CSIC, ICMM, Mat Sci Factory, Sor Juana Ines de la Cruz 3, Madrid 28049, Spain

来源：

ACS PHOTONICS | 2018年 / 5卷 / 08期

关键词：

transition metal trichalcogenides; 2D materials; strain; anisotropy tuning; plasmons; optoelectronics; TRANSITION-METAL TRICHALCOGENIDES; TITANIUM TRISULFIDE TIS3; SINGLE-LAYER; ELECTRONIC-PROPERTIES; SEMICONDUCTOR; GAP; PSEUDOPOTENTIALS; CRYSTALS;

D O I：

10.1021/acsphotonics.8b00467

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The benefits of two-dimensional (2D) materials for applications in nanotechnology can be widened by exploiting the intrinsic anisotropy of some of those crystals, being black phosphorus the most well-known example. In this work we demonstrate that the anisotropy of TiS3, which is even stronger than that of black phosphorus, can be tuned by means of strain engineering. Using density functional theory calculations, we find that the ellipticity of the valence band can be inverted under moderate compressive strain, which is accompanied by an enhancement of the optical absorption. It is shown that the strain tuning of the band anisotropy can be exploited to focus plasmons in the desired direction, a feature that could be used to design TiS3 nanostructures with switchable plasmon channeling.

引用

页码：3231 / 3237

页数：13