Nanoscale Conducting Oxide PlasMOStor

被引：278

作者：

Lee, Ho W. ^{[1
,2
]}

Papadakis, Georgia ^{[1
]}

Burgos, Stanley P. ^{[1
,2
]}

Chander, Krishnan ^{[1
]}

Kriesch, Arian ^{[1
,3
,4
]}

Pala, Ragip ^{[1
,2
]}

Peschel, Ulf ^{[3
,4
]}

Atwater, Harry A. ^{[1
,2
]}

机构：

[1] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA

[2] CALTECH, Kavli Nanosci Inst, Pasadena, CA 91125 USA

[3] Univ Erlangen Nurnberg, Inst Opt Informat & Photon, D-91054 Erlangen, Germany

[4] Univ Erlangen Nurnberg, Grad Sch Adv Opt Technol, D-91054 Erlangen, Germany

来源：

NANO LETTERS | 2014年 / 14卷 / 11期

关键词：

Plasmonics; transparent conducting oxide; modulator; field-effect modulation; epsilon near-zero material; nanocircuits; plasmonic slot waveguide; active palsmonics; WAVE-GUIDE; PLASMONIC NANOCIRCUITS; MODULATORS; ULTRACOMPACT; DISPERSION; PROMISE; DESIGN;

D O I：

10.1021/nl502998z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/mu m) and low waveguide loss (similar to 0.45 dB/mu m). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.

引用

页码：6463 / 6468

页数：6

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