Structural, Optical and Electrical Properties of ZnO/Nb/ZnO Multilayer Thin Films

被引：3

作者：

Nunes Melo, Adolfo Henrique ^{[1
]}

Silva, Petrucio Barroso ^{[1
]}

Macedo, Marcelo Andrade ^{[1
]}

机构：

[1] Univ Fed Sergipe, Dept Phys, BR-49100000 Sao Cristovao, SE, Brazil

来源：

ELECTROCERAMICS VI | 2014年 / 975卷

关键词：

Multilayer; ZnO; Thin Films; ZINC-OXIDE; ZNO; DEVICES;

D O I：

10.4028/www.scientific.net/AMR.975.238

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO multilayers and pure ZnO thin films were deposited onto glass using a sputtering system, and were subsequently characterized by X-ray diffraction and UV-Vis spectroscopy. The resistivity of the samples was measured by the four-probe method. All films exhibited preferential orientation along the c-axis and the peak position (002) shifted to a lower position, indicating a reduction in the unit cell size. The pure ZnO thin film exhibited a maximum transmittance of approximately 98%, which decreased as the Nb layer increased, thus increasing the absorbance of themultilayer thin films. The energy band gap decreased as thethickness of the metalincreased which higher value was 3.18 eV. The resistivity had a minimum of 0.1 x 10(-4) Omega m.

引用

页码：238 / 242

页数：5

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