Thick film SiC epitaxy for 'filling up' micropipes

被引：9

作者：

Khlebnikov, I ^{[1
]}

Madangarli, VP ^{[1
]}

Khan, MA ^{[1
]}

Sudarshan, TS ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

thick film epitaxy; micropipes; micropipe filling;

D O I：

10.4028/www.scientific.net/MSF.264-268.167

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thick film epitaxial growth technique has been demonstrated, based on rapid crystallization during a physical vapor transport process, capable of 'filling up' the micropipes in SIC substrates by initiating crystal growth inside the micropipe. Using this technique it is possible to 'repair' or 'heal' commercially available SiC substrates dominated by micropipes, to obtain micropipe-free wafer surfaces which can be used as a starting substrate for device processing.

引用

页码：167 / 170

页数：4