Strain dependent electronic and optical properties of PtS2 monolayer

被引:73
作者
Liu, Gang [1 ,5 ]
Gan, Yan [1 ]
Quhe, Ruge [2 ,3 ]
Lu, Pengfei [2 ,4 ]
机构
[1] Beijing Univ Posts & Telecommun, Beijing Key Lab Space Ground Interconnect & Conve, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[3] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[5] Beijing Univ Posts & Telecommun, Century Coll, Beijing 102101, Peoples R China
关键词
First-principles; PtS2; monolayer; Strain; Optical properties; GENERALIZED GRADIENT APPROXIMATION; MOS2; TRANSITION;
D O I
10.1016/j.cplett.2018.08.029
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
First-principles calculations were carried out to predict the electronic and optical properties of PtS2 monolayer. We interpreted that the band gaps of monolayer (ML) PtS2 can be tuned continuously via strain engineering. In this thesis, both tensile and shear strains were investigated. It was testified that mechanical strains reduce the band gap of ML PtS2 causing an indirect-to-direct band gap transition. These transitions, in turn, significantly depend on the type of applied strain. The optical properties were calculated and a clear red shift was observed with the increasing strain.
引用
收藏
页码:65 / 70
页数:6
相关论文
共 23 条
[1]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[2]   Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2 [J].
Eda, Goki ;
Fujita, Takeshi ;
Yamaguchi, Hisato ;
Voiry, Damien ;
Chen, Mingwei ;
Chhowalla, Manish .
ACS NANO, 2012, 6 (08) :7311-7317
[3]   Photoluminescence from Chemically Exfoliated MoS2 [J].
Eda, Goki ;
Yamaguchi, Hisato ;
Voiry, Damien ;
Fujita, Takeshi ;
Chen, Mingwei ;
Chhowalla, Manish .
NANO LETTERS, 2011, 11 (12) :5111-5116
[4]  
Ghatak S, 2011, ACS NANO, V5, P7707, DOI [10.1021/nn202852J, 10.1021/nn202852j]
[6]   AB-INITIO MOLECULAR-DYNAMICS SIMULATION OF THE LIQUID-METAL AMORPHOUS-SEMICONDUCTOR TRANSITION IN GERMANIUM [J].
KRESSE, G ;
HAFNER, J .
PHYSICAL REVIEW B, 1994, 49 (20) :14251-14269
[7]   Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].
Kresse, G ;
Furthmuller, J .
PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186
[8]   Few-Layered PtS2 Phototransistor on h-BN with High Gain [J].
Li, Liang ;
Wang, Weike ;
Chai, Yang ;
Li, Huiqiao ;
Tian, Mingliang ;
Zhai, Tianyou .
ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (27)
[9]   Tuning the electronic properties of monolayer and bilayer PtSe2 via strain engineering [J].
Li, Pengfei ;
Li, Lei ;
Zeng, Xiao Cheng .
JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (15) :3106-3112
[10]   Atomically Thin MoS2: A New Direct-Gap Semiconductor [J].
Mak, Kin Fai ;
Lee, Changgu ;
Hone, James ;
Shan, Jie ;
Heinz, Tony F. .
PHYSICAL REVIEW LETTERS, 2010, 105 (13)