Comprehensive Assessment of Avalanche Operating Boundary of SiC PlanarTrench MOSFET in Cryogenic Applications

被引：19

作者：

Qi, Jinwei ^{[1
,2
,3
]}

Yang, Xu ^{[4
]}

Li, Xin ^{[1
]}

Chen, Wenjie ^{[4
]}

Long, Teng ^{[3
]}

Tian, Kai ^{[1
]}

Hou, Xiaodong ^{[1
]}

Wang, Xuhui ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Dept Microelect, Xian 710049, Peoples R China

[2] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China

[3] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England

[4] Xi An Jiao Tong Univ, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2021年 / 36卷 / 06期

基金：

中国国家自然科学基金;

关键词：

1.2 kV SiC planar MOSFET; 1.2 kV SiC trench MOSFET; avalanche capability; cryogenic temperature; Unclamped inductive switching (UIS); POWER MOSFETS; SHORT-CIRCUIT; TEMPERATURE; RUGGEDNESS; PERFORMANCE; ROBUSTNESS; IGBTS;

D O I：

10.1109/TPEL.2020.3034902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe operation of the power conversion systems, particularly under the extreme temperature conditions. In this article, the avalanche capability of SiC planar/trench MOSFETs is systematically evaluated and analyzed over the temperature range of 90 to 340 K. Importantly, the essential mechanisms and temperature dependence of avalanche failure under cryogenic conditions are further explored by combining many analysis methods such as TCAD simulations, the unclamped inductive switching characterizations, and the transient junction temperature prediction. The highest avalanche energy density of 171.24 mJ/mm(2) at 90K indicates the great application potential of SiC planner MOSFET in cryogenic electronics. Moreover, the safe avalanche operation boundary (AOB) model is established over the cryogenic temperature range. The relevant analysis method and AOB model can be used to accurately evaluate and quantitatively predict the avalanche capability of SiC planar/trench MOSFETs for the cryogenic converter design.

引用

页码：6954 / 6966

页数：13

共 32 条

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