Direct extraction of all four transistor noise parameters from 50Ω noise figure measurements

被引：5

作者：

Lazaro, A ^{[1
]}

Pradell, L ^{[1
]}

Beltran, A ^{[1
]}

O'Callaghan, JM ^{[1
]}

机构：

[1] Univ Politecn Catalunya, Dept TSC, ES-08034 Barcelona, Spain

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 03期

关键词：

D O I：

10.1049/el:19980192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C-11(INT), C-22(INT), Re(C-12(INT)) Im(C-12(INT))) by fitting the measured device noise figure for a matched source reflection coefficient (F-50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources.

引用

页码：289 / 291

页数：3

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