Characterization of Ca and C implanted GaN

被引：22
作者：
Mensching, B
Liu, C
Rauschenbach, B
Kornitzer, K
Ritter, W
机构：
[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany
[2] Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany
[3] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期
关键词：
GaN; ion implantation; annealing; doping; simulation;
D O I：
10.1016/S0921-5107(97)00144-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ca+, Ar+ and C+ ions were implanted in molecular beam epitaxy (MBE) grown GaN. Results of Rutherford backscattering (RBS)/channeling measurements are in agreement with simulated distributions of the implanted ions and of the implantation induced damage. Doses higher than 1 x 10(15) cm(-2) result in the formation of heavy damage, which can be partially removed by rapid thermal annealing at 1150 degrees C. After ion implantation followed by annealing, Hall-and Raman-measurements indicate a reduction of the carrier density due to damage caused by the irradiation. Photoluminescence (PL)-measurements show an increase in the intensity of donator-acceptor-pairs compared to the donator-bound exciton. (C) 1997 Elsevier Science S.A.
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收藏
页码：105 / 108
页数：4
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