Single-mode holey vertical-cavity surface-emitting laser with ultra-narrow beam divergence
被引:21
作者:
Liu, A. J.
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机构:
Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
Liu, A. J.
[1
]
Chen, W.
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机构:
Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
Chen, W.
[1
]
Qu, H. W.
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机构:
Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
Qu, H. W.
[1
]
Jiang, B.
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Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
Jiang, B.
[1
]
Zhou, W. J.
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Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
Zhou, W. J.
[1
]
Xing, M. X.
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Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
Xing, M. X.
[1
]
Zheng, W. H.
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机构:
Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
Zheng, W. H.
[1
,2
]
机构:
[1] Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
divergence angle;
graded index profile;
low index step;
single mode;
vertical-cavity surface-emitting laser;
WAVE-GUIDE;
POWER;
VCSELS;
INDEX;
DEPTH;
D O I:
10.1002/lapl.200910130
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
We demonstrated oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs) with a two-dimensional petal-shaped holey structure composed of several annular-sector-shaped holes. Four types of devices with different hole numbers were designed and fabricated. The measured results showed that the larger hole number was beneficial to purifying the lasing mode, and realizing the single-mode operation. The side mode suppression ratio (SMSR) exceeded 30 dB throughout the entire drive current. Mode selective loss mechanism was used to explain the single-mode characteristic. The single-mode devices possessed good beam profiles, and the lowest divergence angle was as narrow as 3.2 degrees (full width at half maximum), attributed to the graded index profile and the shallow etching in the top distributed Bragg reflector (DBR). [GRAPHICS] Scanning electron microscope (SEM) image of the fabricated device (C) 2010 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA