GaP((1)over-bar(1)over-bar(1)over-bar) reconstructed surface studied with STM and LEED

被引:11
作者
Hattori, K
Ishihara, K
Miyatake, Y
Matsui, F
Takeda, S
Daimon, H
Komori, F
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
关键词
gallium phosphide; surface relaxation and reconstruction; surface structure; morphology; roughness; and topography; scanning tunneling microscopy; low energy electron diffraction (LEED);
D O I
10.1016/S0039-6028(02)02564-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied GaP((1) over bar(1) over bar(1) over bar) reconstructed clean surface with scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). We found that the surface consists of six equivalent mirror-symmetric domains and each domain has stripe structure. The stripe directions tilt from three ((1) over bar(1) over bar2) directions clockwise and counterclockwise at the same angle, resulting in six domains. The stripe period and the tilt angle are 1.30 nm and 6.8degrees, respectively. Magnified STM images revealed that all stripes in one domain have the same protrusion unit along the stripe direction, and that the origin of the protrusion unit is arranged by two vectors for the inter-stripe direction. The same unit-vector in the stripe direction and the two unit-vectors in the inter-stripe direction constitute two different surface-reconstruction units, namely units 1 and 2. We assigned the reconstruction matrices of units 1 and 2 in one domain to ((2 5) (3 -1)) and ((2 5) (4 1)), respectively. A trial structure model assuming the same elements located at the protrusions well explains observed LEED patterns. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:57 / 65
页数:9
相关论文
共 16 条
[1]  
Bhuiyan AG, 2001, PHYS STATUS SOLIDI B, V228, P27, DOI 10.1002/1521-3951(200111)228:1<27::AID-PSSB27>3.0.CO
[2]  
2-S
[3]   Comparison between ab initio theory and scanning tunneling microscopy for (110) surfaces of III-V semiconductors [J].
Engels, B ;
Richard, P ;
Schroeder, K ;
Blugel, S ;
Ebert, P ;
Urban, K .
PHYSICAL REVIEW B, 1998, 58 (12) :7799-7815
[4]   LATERAL QUANTUM-WELL WIRES FABRICATED BY SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FUKUI, T ;
ANDO, S ;
FUKAI, YK .
APPLIED PHYSICS LETTERS, 1990, 57 (12) :1209-1211
[5]  
Givargizov E. I., 1975, Kristall und Technik, V10, P473, DOI 10.1002/crat.19750100503
[6]   LASER-INDUCED ELECTRONIC PROCESSES ON GAP (110) SURFACES - PARTICLE-EMISSION AND ABLATION INITIATED BY DEFECTS [J].
HATTORI, K ;
OKANO, A ;
NAKAI, Y ;
ITOH, N .
PHYSICAL REVIEW B, 1992, 45 (15) :8424-8436
[7]  
HATTORI K, 1990, SURF SCI, V227, pL115, DOI 10.1016/0039-6028(90)90383-J
[8]   SURFACE STATES ON PHOSPHORUS-RICH AND GALLIUM-RICH GAP(111)P SURFACES IN ELECTRON ENERGY-LOSS SPECTROSCOPY AND PHOTOEMISSION [J].
JACOBI, K .
SURFACE SCIENCE, 1975, 51 (01) :29-37
[9]  
KUMAZAKI Y, 1987, SURF SCI, V184, pL445, DOI 10.1016/S0039-6028(87)80358-8
[10]   Initial stage of Ag growth on Ge(001) surfaces at room temperature [J].
Kushida, K ;
Hattori, K ;
Arai, S ;
Iimori, T ;
Komori, F .
SURFACE SCIENCE, 1999, 442 (02) :300-306