Solution-Processed Quantum Dot LEDs Using Molybdenum Oxide and Titanium Oxide as Charge Transport Layers

被引：3
|
作者：
Kwack, Young-Jin [1 ]
Jang, Hye-Ryeon [1 ]
Ka, Yunsoon [1 ]
Choi, Woon-Seop [1 ]
机构：
[1] Hoseo Univ, Dept Display Engn, Asan 336795, South Korea
来源：
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2016年 / 11卷 / 02期
关键词：
Quantum Dot Light Emitting Diode (QD LED); Metal Oxide; Solution-Process; LIGHT-EMITTING DEVICES; HIGHLY EFFICIENT; DIODES; CDSE/CDS/ZNS; DISPLAYS; CELLS;
D O I：
10.1166/jno.2016.1865
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
All-solution-processed red quantum dots LEDs (QD-LEDs) were fabricated using MoO3 metal oxide and sol-gel TiO2 as the anode and cathode buffer layers, respectively. The metal oxides were synthesized using simple solution methods. A hybrid structure of a core-shel/shell type red QD was synthesized. The QD-LEDs had the following structure: ITO/MoO3/(CdSe/CdS/ZnS) QDs/sol gel TiO2/Al. The J-V-L characteristics of the solution-processed QD LED showed a maximum luminescence of 71.54 cd/m(2) at an operating voltage of 7.0 V. The properties of the synthesized QD and LED device were characterized.
引用
收藏
页码：234 / 238
页数：5
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