Enhancing the NO sensing properties of the SnO2 nanowires sensors by Ar-O2 plasma modification

被引：4

作者：

Xu, T. T. ^{[1
,2
]}

Liu, Y. Y. ^{[1
,2
]}

Jiang, Z. M. ^{[1
,2
]}

Pei, Y. Y. ^{[1
,2
]}

Zhang, S. ^{[1
,2
]}

Xu, J. M. ^{[1
,2
]}

Zhang, X. L. ^{[3
]}

Li, X. J. ^{[1
,2
]}

机构：

[1] Zhengzhou Univ, Dept Phys & Engn, Zhengzhou 450052, Peoples R China

[2] Zhengzhou Univ, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China

[3] Zhengzhou Univ, Dept Mat Sci & Engn, Zhengzhou 450052, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 16期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

FIELD-EMISSION PROPERTIES; SURFACE MODIFICATION; NANOSTRUCTURES; OXIDE; PERFORMANCES; NANORODS;

D O I：

10.1007/s10854-018-9522-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SnO2 nanowires were prepared in an Au-catalyzed VLS growth process by thermal evaporation. The NO sensing properties of the resistive gas sensor based on the SnO2 nanowires was found to be improved obviously after the SnO2 nanowires were treated by Ar-O-2 plasma. The responses of the gas sensors to 10, 20, 30, 40, 50 ppm NO gas increased from 8.4, 10.6, 12.6, 14.2, 16.1% to 44.2, 91.9, 108.0, 118.1, 157.4% at 100 A degrees C, respectively. The selectivity of the gas sensors to NO gas against NO2, NH3, CH4, H-2 and O-2 was also enhanced greatly. The characterization by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy revealed that the enhanced gas sensing properties can be attributed to the rough surfaces, the resultant dangling bond and free lattice sites, and the Sn3O4 grains appearing on the surface of the Ar-O-2 plasma treated SnO2 nanowires.

引用

页码：13897 / 13902

页数：6

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