A 15.6 dBm Psat, 24 dB Gain, 24.4%PAF, Linear CMOS Power Amplifier for 5G Application

被引：0
作者：
Rao, Li [1 ]
Feng, Haigang [1 ]
Xing, Xinpeng [1 ]
Tani, Yulin [2 ]
机构：
[1] Tsinghua Univ, Grad Sch Shenzhen, Shenzhen Key Lab Informat Sci & Technol, Shenzhen 518055, Peoples R China
[2] Radiawave Technol Co Ltd, Shenzhen 518055, Peoples R China
来源：
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年
关键词：
65nm CMOS; power amplifier; tranformer coupling; 5G;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a 26GHz power amplifier for high band 5G application in 65nm CMOS technology. By using three stage differential common source topology plus final four-way power combiner, 24dB gain of PA is achieved at millimeter wave frequency. Capacitors, Complicated inductors and transformers scheme provide good matching for input, inter stage and output at 26GHz hand. Simulation results demonstrate the PA with P-sat of 15.6 dBm, OP1dB of 13.3 dBm, and peak PAE of 24.44%. Its-3dB bandwidth covers 4GHz, with better than 10dB input/output return loss across hand. It consumes 74mA from a 1.5V supply.
引用
收藏
页数：3
相关论文
共 50 条
[41]   A 18-24 GHz Compact Single Stage Amplifier with 13 ± 0.5 dB gain, OP3dB of+19 dBm and 19% PAE for Radar Applications in Tower 180 nm CMOS. [J].
Jameson, Samuel ;
Buadana, Nadav ;
Szulc, Eli ;
Sayag, Avraham ;
Sarusi, Isaac ;
Wolfman, Amitay ;
Shaham, Ofer .
2019 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, ANTENNAS, COMMUNICATIONS AND ELECTRONIC SYSTEMS (COMCAS), 2019,
[42]   Novel Continuous Inverse Class F Power Amplifier for High Power 5G Macro Base Station Application [J].
Sharma, Tushar ;
Zhu, Ning ;
Roberts, Jeffrey ;
Holmes, Damon H. .
2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2021, :729-731
[43]   A 60-GHz 20.6-dBm Symmetric Radial-Combining Wideband Power Amplifier with 20.3% Peak PAE and 20-dB Gain in 90-nm CMOS [J].
Chou, Cheng-Feng ;
Wu, Chen-Wei ;
Hsiao, Yuan-Hung ;
Wu, Yi-Ching ;
Lin, Yu-Hsuan ;
Wang, Huei .
2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
[44]   A 28 GHz and 38 GHz High-Gain Dual-Band Power Amplifier for 5G Wireless Systems in 22 nm FD-SOI CMOS [J].
Xu, Xin ;
Li, Songhui ;
Szilagyi, Laszlo ;
Matthus, Christian ;
Finger, Wolfgang ;
Carta, Corrado ;
Ellinger, Frank .
2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2020, :174-177
[45]   A 27 GHz Adaptive Bias Variable Gain Power Amplifier and T/R Switch in 22nm FD-SOI CMOS for 5G Antenna Arrays [J].
Elgaard, Christian ;
Andersson, Stefan ;
Caputa, Peter ;
Westesson, Eric ;
Sjoland, Henrik .
2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2019, :303-306
[46]   A 21-39.5 GHz Power Amplifier for 5G Wireless Systems in 22 nm FD-SOI CMOS [J].
Xu, Xin ;
Testa, Paolo Valerio ;
Li, Songhui ;
Szilagyi, Laszlo ;
Finger, Wolfgang ;
Carta, Corrado ;
Ellinger, Frank .
PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, :1640-1642
[47]   A 38-GHz High Linearity and High Efficiency Power Amplifier for 5G Applications in 65-nm CMOS [J].
Li, Xin-Yi ;
Chen, Yu-Chun ;
Wang, Yunshan ;
Huang, Tian-Wei ;
Wang, Huei .
2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2020, :178-181
[48]   A 28-GHz-Band Efficient Linear Power Amplifier With Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI [J].
Fang, Mengchu ;
Sugiura, Tsuyoshi ;
Yoshimasu, Toshihiko .
2020 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM, IWS, 2020,
[49]   High Efficiency Broadband Class F Power Amplifier for Sub-6-GHz 5G Application [J].
Manoj, Harsha ;
Gupta, Mani Shankar Prasad ;
Naik, Jatoth Deepak ;
Gorre, Pradeep ;
Kumar, Sandeep .
2023 IEEE WIRELESS ANTENNA AND MICROWAVE SYMPOSIUM, WAMS, 2023,
[50]   22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability [J].
Bossu, G. ;
Syed, S. ;
Evseev, S. ;
Jerome, J. A. S. ;
Arfaoui, W. ;
Lipp, D. ;
Siddabathula, M. .
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2022,
12345