Calculation of lattice constant of 4H-SiC as a function of impurity concentration

被引：27

作者：

Matsumoto, Tsubasa ^{[1
,2
]}

Nishizawa, Shin-ichi ^{[2
]}

Yamasaki, Satoshi ^{[1
,2
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058571, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058571, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

lattice constant; nitrogen; aluminum; diamond; doping;

D O I：

10.4028/www.scientific.net/MSF.645-648.247

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Calculations of lattice constant of 4H-SiC and diamond have been carried out. Lattice constant of 4H-SiC trends to decrease when nitrogen concentration increases. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Lattice constant of boron and phosphorus doped diamond trends to increase when impurity concentration increases. The effect of phosphorus on diamond lattice constant is about six times larger than that of boron.

引用

页码：247 / +

页数：2

共 6 条

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