Wire Sweep Characterization in System-in-Package (SiP) Component with Au Wire Bonding During Epoxy Molding Compounds Molding Process

被引：0

作者：

Myung, Woo-Ram ^{[1
]}

Bang, Jae-Oh ^{[2
]}

Ha, Sang-Su ^{[2
,3
]}

Kim, Dae Up ^{[4
]}

Jung, Seung-Boo ^{[2
]}

机构：

[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, 2066 Seobu Ro, Suwon 440746, South Korea

[3] Samsung Elect Co Ltd, Technol Qual & Reliabil Team Syst LSI, Suwon 17113, Gyeonggi Do, South Korea

[4] Korea Inst Ind Technol, Carbon & Light Mat Applicat Grp, Jeonju 54853, South Korea

来源：

NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2015年 / 7卷 / 12期

关键词：

System-in-Package (SiP); Wire Bonding; Epoxy Mold Compound; Molding Process; Finite Element Simulation;

D O I：

10.1166/nnl.2015.2087

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We focused failure analysis of a System-in-Package (SiP) component including wire sweep and epoxy molding compounds (EMC) molding flow during the molding process. The SiP component was assembled by flip-chip and wire bonding with 0.7 mil diameter on a substrate with EMC. Two Si devices were used, one of which was bonded using ball grid array (BGA) solder balls, and underfill process was then performed to fill the gap between the Si device and the substrate after joining. The other Si device was wire-bonded on the substrate using Au wire. However, wire sweep and wire lift happened during EMC molding process. To reduce the wire sweep and wire lift, we changed the bonding structure of stitch-bonded Au wire to the double bonding. As a result, wire lift did not occur and the wire sweep reduced.

引用

页码：994 / 998

页数：5