Simulation of signal generation for silicon avalanche photodiodes (APDs)

被引:12
作者
Tapan, I [1 ]
Gilmore, RS
机构
[1] Uludag Univ, Fen Edebiyat Fak, Fizik Bolumu, TR-16059 Bursa, Turkey
[2] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
关键词
avalanche photodiodes; signal generation; avalanche gain simulation; short wavelength photons detection;
D O I
10.1016/S0168-9002(00)00835-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Silicon Avalanche Photodiodes (APDs) are currently proposed as readout devices for the electromagnetic calorimeters to be used in proposed new detectors. In the present paper the photon detection mechanism of APDs is investigated and we discuss possible APD structures that would be suitable for particle physics experiments. Calculations were made with a Single-Particle Monte Carlo simulation technique, written in Fortran. The results agree well with measurements made on commercial APDs. Based on this work, we suggest some changes which improve the performance of APDs as detectors for scintillation light. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:247 / 251
页数:5
相关论文
共 50 条
  • [31] Modeling of Avalanche Gain for High-speed InP/InGaAs Avalanche Photodiodes
    Park, J. K.
    Yun, I.
    EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, : 188 - 191
  • [32] Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes
    WANG Gang & MA YuXiang State Key Laboratory of Optoelectronic Materials and Technologies
    Science Bulletin, 2009, (20) : 3685 - 3690
  • [33] Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes
    Wang Gang
    Ma YuXiang
    CHINESE SCIENCE BULLETIN, 2009, 54 (20): : 3685 - 3690
  • [34] Edge breakdown suppression in planar avalanche photodiodes: The joint opening effect avalanche photodiode
    Haralson, JN
    Brennan, KF
    PHOTODETECTORS: MATERIALS AND DEVICES VI, 2001, 4288 : 31 - 38
  • [35] Antimonide-Based Avalanche Photodiodes on InP Substrates
    Krishna, Sanjay
    2021 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID), 2021,
  • [36] Novel edge suppression technique for planar avalanche photodiodes
    Haralson, JN
    Brennan, KF
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (12) : 1863 - 1869
  • [37] Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes
    Shao, Z. G.
    Yang, X. F.
    You, H. F.
    Chen, D. J.
    Lu, H.
    Zhang, R.
    Zheng, Y. D.
    Dong, K. X.
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (04) : 485 - 488
  • [38] Repeated radiation damage and thermal annealing of avalanche photodiodes
    Ian DSouza
    Jean-Philippe Bourgoin
    Brendon L. Higgins
    Jin Gyu Lim
    Ramy Tannous
    Sascha Agne
    Brian Moffat
    Vadim Makarov
    Thomas Jennewein
    EPJ Quantum Technology, 2021, 8
  • [39] Avalanche photodiodes as fast X-ray detectors
    Kishimoto, S
    JOURNAL OF SYNCHROTRON RADIATION, 1998, 5 : 275 - 279
  • [40] Repeated radiation damage and thermal annealing of avalanche photodiodes
    DSouza, Ian
    Bourgoin, Jean-Philippe
    Higgins, Brendon L.
    Lim, Jin Gyu
    Tannous, Ramy
    Agne, Sascha
    Moffat, Brian
    Makarov, Vadim
    Jennewein, Thomas
    EPJ QUANTUM TECHNOLOGY, 2021, 8 (01)