Simulation of signal generation for silicon avalanche photodiodes (APDs)

被引：12
|
作者：
Tapan, I [1 ]
Gilmore, RS
机构：
[1] Uludag Univ, Fen Edebiyat Fak, Fizik Bolumu, TR-16059 Bursa, Turkey
[2] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2000年 / 454卷 / 01期
关键词：
avalanche photodiodes; signal generation; avalanche gain simulation; short wavelength photons detection;
D O I：
10.1016/S0168-9002(00)00835-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Silicon Avalanche Photodiodes (APDs) are currently proposed as readout devices for the electromagnetic calorimeters to be used in proposed new detectors. In the present paper the photon detection mechanism of APDs is investigated and we discuss possible APD structures that would be suitable for particle physics experiments. Calculations were made with a Single-Particle Monte Carlo simulation technique, written in Fortran. The results agree well with measurements made on commercial APDs. Based on this work, we suggest some changes which improve the performance of APDs as detectors for scintillation light. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：247 / 251
页数：5
相关论文
共 50 条
  • [11] Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes
    Haralson, JN
    Parks, JW
    Brennan, KF
    Clark, W
    Tarof, LE
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (11) : 2137 - 2140
  • [12] Simulation of avalanche time in thin GaN/4H-SiC heterojunction avalanche photodiodes
    Cheang, P. L.
    You, A. H.
    Yap, Y. L.
    Sun, C. C.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2024, 23 (02) : 314 - 329
  • [13] Simulation of avalanche time in thin GaN/4H–SiC heterojunction avalanche photodiodes
    P. L. Cheang
    A. H. You
    Y. L. Yap
    C. C. Sun
    Journal of Computational Electronics, 2024, 23 : 314 - 329
  • [14] Avalanche Gain Modeling Revisited in HgCdTe APDs
    Rothman, Johan
    Abergel, Julie
    Coquiard, Antoine
    Gout, Sylvain
    Lonjon, Maxime
    Montel, Anaelle
    Lechevallier, Loic
    Ferron, Alexandre
    Mavel, Amaury
    Bustillos-Vasco, Samantha
    Renet, Sebastien
    Berger, Frederic
    Vandeneynde, Aurelie
    Brunet-Manquat, Sandy
    JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (10) : 5829 - 5841
  • [15] Low-noise silicon avalanche photodiodes fabricated in conventional CMOS technologies
    Rochas, A
    Pauchard, AR
    Besse, PA
    Pantic, D
    Prijic, Z
    Popovic, RS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (03) : 387 - 394
  • [16] Avalanche photodiodes in scintillation detection
    Moszynski, M
    Szawlowski, M
    Kapusta, M
    Balcerzyk, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 497 (01) : 226 - 233
  • [17] GaN/SiC avalanche photodiodes
    Zhou, Qiugui
    McIntosh, Dion C.
    Lu, Zhiwen
    Campbell, Joe C.
    Sampath, Anand V.
    Shen, Hongen
    Wraback, Michael
    APPLIED PHYSICS LETTERS, 2011, 99 (13)
  • [18] Avalanche photodiodes for electromagnetic calorimeters
    Pilicer, Ercan
    Kocak, Fatma
    Tapan, Ilhan
    Ahmetoglu , Muhitdin
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 572 (01) : 120 - 121
  • [19] Design and Optimization of Silicon Avalanche Photodiodes With Desired Breakdown Voltage Using Bayesian Optimization
    Ghazvini, Sara
    Schuppener, Gerd
    Fan, Wenjuan
    Ramaswamy, Srinath
    Vandenberghe, William G.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025,
  • [20] A Comparative Study of Silicon Drift Detectors With Photomultipliers, Avalanche Photodiodes and PIN Photodiodes in Gamma Spectrometry With LaBr3 Crystals
    Moszynski, M.
    Plettner, C.
    Nassalski, A.
    Szczesniak, I.
    Swiderski, L.
    Syntfeld-Kazuch, A.
    Czarnacki, W.
    Pausch, G.
    Stein, J.
    Niculae, A.
    Soltau, H.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (03) : 1006 - 1011
12345