Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

被引：0

作者：

Chen, CY ^{[1
]}

Chen, WD

Li, GH

Song, SF

Ding, K

Xu, ZJ

机构：

[1] Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS | 2003年 / 12卷 / 04期

关键词：

a-Si domain; erbium; photoluminescence;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H<Er>) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:H<Er> films.

引用

页码：438 / 442

页数：5

共 50 条

[41] Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures
B. A. Andreev
Z. F. Krasil’nik
D. I. Kryzhkov
A. N. Yablonskii
V. P. Kuznetsov
T. Gregorkiewicz
M. A. J. Klik
Physics of the Solid State, 2004, 46 : 97 - 100
[42] Fluorine-Enhanced Room Temperature Luminescence of Er-Doped Crystalline Silicon
Wang, Xiaoming
He, Jiajing
Jin, Shenbao
Liu, Huan
Li, Hongkai
Wen, Huimin
Zhao, Xingyan
Abedini-Nassab, Roozbeh
Sha, Gang
Yue, Fangyu
Dan, Yaping
ADVANCED PHOTONICS RESEARCH, 2022, 3 (12):
[43] Er-doped titanium dioxide/silicon dioxide fibres with enhanced photodegradation performance
Wang, Jidong
An, Xiaolong
Yu, Yuan
Li, Xiaoqiang
Ge, Mingqiao
MICRO & NANO LETTERS, 2018, 13 (03): : 297 - 301
[44] Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film
Mai, Lili
Xu, Fei
Jiang, Zuimin
Ma, Zhongquan
Wang, Xiao
Xu, Run
Fan, Yongliang
Lou, Haonan
Lu, Fang
Zheng, Lingling
THIN SOLID FILMS, 2010, 518 (23) : 6993 - 6996
[45] Whispering gallery modes in Er-doped silicon-rich oxide toroidal microcavities on chip
Jager, J. B.
Noe, P.
Picard, E.
Calvo, V.
Delamadeleine, E.
Hadji, E.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (06) : 1127 - 1129
[46] Photoluminescence of Er-doped silicon-rich oxide thin films with high Al concentrations
Rozo, Carlos
Fonseca, Luis F.
Jaque, Daniel
Garcia Sole, Jose
SELECTED PAPERS FROM 17TH INTERNATIONAL CONFERENCE ON DYNAMICAL PROCESSES IN EXCITED STATES OF SOLIDS (DPC'10), 2011, 13
[47] Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots
Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Monteiro, T.
Soares, M. J.
Peres, M.
Neves, A.
Alves, E.
ADVANCED MATERIALS FORUM III, PTS 1 AND 2, 2006, 514-516 : 1116 - 1120
[48] Low-operating-voltage 1.5-μm-electroluminescent device with an Er-doped silicon suboxide layer and electron injection from tin oxide
Naka, Yoshihiro
Soneda, Shinya
Nakano, Seiichi
Sumiyoshi, Takeshi
Tsuchiya, Masahiro
Nakamura, Yusui
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2013, 48 : 187 - 190
[49] Er3+ Doping conditions of planar porous silicon waveguides
Najar, A.
Lorrain, N.
Ajlani, H.
Charrier, J.
Oueslati, M.
Haji, L.
APPLIED SURFACE SCIENCE, 2009, 256 (03) : 581 - 586
[50] Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium
Terukov, EI
Kudoyarova, VK
Kuznetsov, AN
Fuhs, W
Weiser, G
Kuehne, H
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 488 - 492

← 1 2 3 4 5 →