Al thin film: The effect of substrate type on Al film formation and morphology

被引:28
作者
Khachatryan, Hayk [1 ]
Lee, Sung-Nam [2 ]
Kim, Kyoung-Bo [3 ]
Kim, Han-Ki [4 ]
Kim, Moojin [5 ]
机构
[1] Yerevan State Univ, Dept Inorgan Chem, 1 A Manukyan St, Yerevan 0025, Armenia
[2] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, South Korea
[3] Inha Tech Coll, Dept Met & Mat Engn, Incheon 402752, South Korea
[4] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[5] Jungwon Univ, Dept Elect & Elect Engn, Goesan Gun 367805, Chungbuk, South Korea
基金
新加坡国家研究基金会;
关键词
Al thin film; Metal; Metalloid and non-metal substrates; Grain growth mechanism; HILLOCK GROWTH; ALUMINUM;
D O I
10.1016/j.jpcs.2018.06.018
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this work aluminium (Al) films were deposited on different substrates, and their phase, microstructure and film growth process were tracked. Three types of substrates were explored to determine the influence of the substrate on the film growth process. It was determined that the growth mechanism of Al on the metal substrate was totally different from that on metalloids and glass. The Al film grown on metal substrate had a cross-grained structure, while films formed on glass had a fine-grained structure. Film grown on metalloids fell between the two. It was found that these differences in microstructure affected the film's optical properties. Films grown on silicon and glass were very reflective while film grown on the metallic substrate scattered light. It was determined that nucleation of the film deposited on the metallic substrate began when the film thickness exceeded 50 nm. Further increasing thickness triggered grain growth, and the formation of crystallites up to 40 nm occurred when film thickness was 150 nm. It was observed that grain growth was more favorable on metallic substrates, and the lowest grain growth was observed on the glass substrate.
引用
收藏
页码:109 / 117
页数:9
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