Texture of Cobalt Germanides on Ge(100) and Ge(111) and Its Influence on the Formation Temperature

被引：19

作者：

De Keyser, K. ^{[1
]}

Van Meirhaeghe, R. L. ^{[1
]}

Detavernier, C. ^{[1
]}

Jordan-Sweet, J. ^{[2
]}

Lavoie, C. ^{[2
]}

机构：

[1] Univ Ghent, Dept Solid State Phys, B-9000 Ghent, Belgium

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 04期

关键词：

cobalt alloys; crystal microstructure; electron backscattering; germanium alloys; phase transformations; sputter deposition; substrates; surface texture; X-ray diffraction; GROWTH;

D O I：

10.1149/1.3294702

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The phase formation of cobalt germanides on Ge(100) and Ge(111) substrates was investigated using in situ X-ray diffraction, starting from room-temperature sputter-deposited Co films. The formation temperature of the CoGe(2) phase was dependent on the substrate orientation. X-ray pole figures and electron backscatter diffraction measurements were used to identify the texture and microstructure of the CoGe(2) and the preceding Co(5)Ge(7) films. A significant difference in preferential orientation was found in the Co(5)Ge(7) films, depending on the substrate orientation. This influences the formation temperature of the CoGe(2) and results in the coexistence of Co(5)Ge(7) and CoGe(2) on Ge(111) in a large temperature window.

引用

页码：H395 / H404

页数：10

共 11 条

[1] Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance [J].

Brunco, D. P. ;

De Jaeger, B. ;

Eneman, G. ;

Mitard, J. ;

Hellings, G. ;

Satta, A. ;

Terzieva, V. ;

Souriau, L. ;

Leys, F. E. ;

Pourtois, G. ;

Houssa, M. ;

Winderickx, G. ;

Vrancken, E. ;

Sioncke, S. ;

Opsomer, K. ;

Nicholas, G. ;

Caymax, M. ;

Stesmans, A. ;

Van Steenbergen, J. ;

Mertens, P. W. ;

Meuris, M. ;

Heyns, M. M. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (07) :H552-H561

[2] An off-normal fibre-like texture in thin films on single-crystal substrates [J].

Detavernier, C ;

Özcan, AS ;

Jordan-Sweet, J ;

Stach, EA ;

Tersoff, J ;

Ross, FM ;

Lavoie, C .

NATURE, 2003, 426 (6967) :641-645

[3] Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates [J].

Ehsani, H ;

Bhat, I ;

Gutmann, RJ ;

Charache, G ;

Freeman, M .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :835-840

[4] Reaction of thin Ni films with Ge: Phase formation and texture [J].

Gaudet, S. ;

Detavernier, C. ;

Lavoie, C. ;

Desjardins, P. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)

[5] Thin film reaction of transition metals with germanium [J].

Gaudet, S ;

Detavernier, C ;

Kellock, AJ ;

Desjardins, P ;

Lavoie, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03) :474-485

[6] PARTIAL EPITAXIAL-GROWTH OF COBALT GERMANIDES ON (111)GE [J].

HSIEH, YF ;

CHEN, LJ ;

MARSHALL, ED ;

LAU, SS .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1588-1590

[7] Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions [J].

Opsomer, K. ;

Deduytsche, D. ;

Detavernier, C. ;

Van Meirhaeghe, R. L. ;

Lauwers, A. ;

Maex, K. ;

Lavoie, C. .

APPLIED PHYSICS LETTERS, 2007, 90 (03)

[8] Microstructural Evolution and Electrical Characteristics of Co-Germanide Contacts on Ge [J].

Park, K. ;

An, C. -H. ;

Lee, M. S. ;

Yang, C. -W. ;

Lee, H. -J. ;

Kim, H. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (04) :H229-H232

[9] Formation and evolution of epitaxial Co5Ge7 on Ge(001) surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope -: art. no. 071904 [J].

Sun, HP ;

Chen, YB ;

Pan, XQ ;

Chi, DZ ;

Nath, R ;

Foo, YL .

APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3

[10] Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate [J].

Yamada, A ;

Fons, PJ ;

Hunger, R ;

Iwata, K ;

Matsubara, K ;

Niki, S .

APPLIED PHYSICS LETTERS, 2001, 79 (05) :608-610

← 1 2 →